1. Electronics
in Solids 12
hours
1.1
Energy Bands: Insulator, Metal, Semiconductor, Intrinsic and Extrinsic
Semiconductor, Direct and Indirect Semiconductor, Fermi level variation in
semiconductor, Temperature dependence of carrier concentration.
1.2
Carrier Dynamics in semiconductors: Carrier Transport by drift
and diffusion, Scattering, low field response, high field transport, impact
ionization, band to band tunneling, charge injection and quasi Fermi levels,
generation and recombination.
1.3
Carriers in electric and magnetic field: Hall Effect, Hall
Coefficient, low temperature and high temperature effects.
I [3 (3.1, 3.3, 3.4)]; II [3
(3.2-3.4, 3.6, 3.7)]
2. P-N
Junction Diodes 10 hours
2.1
Junction characteristics: current-voltage
characteristics, capacitance-voltage characteristics, effect of temperature on
characteristics, Zener and Avalanche breakdown, forward and reverse biased
junctions, space charge at junction.
2.2
Transient and A-C conditions: Time variation of stored
charge, reverse recovery transient, small signal equivalent circuit of diode,
large signal switching of diode.
2.3
Metal-Semiconductor junctions: Schottky barriers, Schottky
effect, rectifying and ohmic contacts, heterojunctions.
I [5 (5.2-5.5, 5.7, 5.8)]; II [5(5.6)]
3. Bipolar
Transistors 10 hours
3.1
BJT static performance parameters: Emitter injection
efficiency, base transport factor, collector efficiency and current gain.
3.2
Transient response: Cutoff, saturation, the switching cycle,
frequency limitations of transistors.
3.3
Secondary effects in real devices: Early effect and punch
through, thermal effects, current crowding effect, high injection and Kirk
effect.
I [7 (7.6, 7.7)]; II [7 (7.4, 7.5)]
4. Field
Effect Transistors 10
hours
4.1
MOS
Device: MOS as capacitor, oxide and interface trapped charge, I-V
characteristics, depletion and enhancement MOSFET, complementary MOSFET.
4.2
Important issues in real devices: Short channel effects,
substrate bias effects, latch-up, subthreshold characteristics, leakage
currents.
4.3
Charge transfer Device: The basic principle,
applications.
I [6 (6.5), 9 (9.4)]; II [9 (9.3, 9.5)]
5. Microwave
and Photonic Devices 10 hours
5.1
Tunnel
doide, IMPATT, and Gunn diode, Varactor diode, characteristics of microwave
transistor, tunnel transistor.
5.2
LED
and LCD, Photodetectors, solar cells, Semiconductor Lasers.
I [5 (5.5), 7(7.8), 8, 10)]; III [3 (3.3)]
6. Integrated
Circuits
8 hours
6.1 Evolution
of ICs: SSI,
MSI, LSI, VLSI, Monolithic and Hybrid circuits.
6.2 Monolothic
IC Process: Crystal growth, wafer
preparation, metallization testing,
bonding, packaging.
I [1 (1.1, 1.3), 9(9.1, 9.2, 9.6)]
Text Books
I. Ben G. Streetman and Sanjay Banerjee,
“Solid State Electronic Devices”, Prentice-Hall of India Private Limited (2001)
II. Jasprit Singh, “Semiconductor Devices - Basic Principles”,
John Wiley & Sons,Inc.(2002)
III. S M Sze, “Physics of Semiconductor Devices”, John Wiley
&Sons (1999)